The Multiplex ICP MACS Bosch process is a high-aspect-ratio (HAR) silicon dry etching process that is used to create deep, narrow trenches and vias in silicon wafers. The process uses a combination of inductive coupled plasma (ICP) and magnetically assisted chemical stripping (MACS) to achieve high selectivity and etch rates.

Multiplex ICP MACS Bosch process 

The ICP source is used to generate a high-density plasma that is used to etch the silicon. The MACS plates are used to create a magnetic field that traps the plasma ions and directs them towards the silicon surface. This helps to improve the selectivity of the etch process and prevent the etching of the sidewalls of the trenches and vias.

The Multiplex ICP MACS Bosch process is a complex process that requires careful control of a number of parameters, including the plasma density, the magnetic field strength, and the gas flow rates. However, when it is used correctly, it can produce very high-quality results.

The Multiplex ICP MACS Bosch process is used in a variety of applications, including:

• Microelectromechanical systems (MEMS)
• Semiconductor manufacturing
• Power devices
• BioMEMS

The Multiplex ICP MACS Bosch process is a powerful tool for creating HAR silicon structures. It is a versatile process that can be used to produce a wide variety of structures, and it is a key process for the manufacturing of many advanced devices.